Reliability, Yield, and Stress Burn-In: A Unified Approach by Way Kuo

By Way Kuo

The foreign marketplace is especially aggressive for high-tech brands to­ day. attaining aggressive caliber and reliability for items calls for chief­ send from the head, strong administration practices, powerful and effective operation and upkeep structures, and use of acceptable updated engineering de­ signal instruments and techniques. additionally, production yield and reliability are interrelated. production yield relies on the variety of defects came upon dur­ ing either the producing approach and the guaranty interval, which in flip determines the reliability. the construction of microelectronics has advanced into because the early 1970's, one of many world's greatest production industries. therefore, a massive schedule is the learn of reliability concerns in fabricating microelectronic items and for that reason the platforms that hire those items, relatively, the recent iteration of microelectronics. Such an schedule should still comprise: • the commercial influence of utilising the microelectronics fabricated by means of in­ dustry, • a learn of the connection among reliability and yield, • the development towards miniaturization and better reliability, and • the correctness and complexity of latest method designs, which come with a really good portion of software.

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Additional resources for Reliability, Yield, and Stress Burn-In: A Unified Approach for Microelectronics Systems Manufacturing & Software Development

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WBI is achieved by applying a high bias via a pad before WP to screen the weaker chips in a few seconds. 0V for three seconds. As to the known good die (KGD), manufacturers are required to make full parametric and functional tests with a WP test. The KGD is especially important for the multi-chip module (MCM) makers. Thus, the demand for more comprehensive, effective, efficient, and complete WP tests is increasing as more emphasis is being put on the WP than on the final test [190]. Dicing and Assembly Dicing is a process that separates a wafer into individual chips.

Before epitaxy growth the wafer is mechanical or chemical cleaned. The epitaxial growth operations are typically based on the vapor phase epitaxy (VPE) or molecular beam epitaxy (MBE) [84, 412]. The film properties depend on the device requirement [190]. Although the epitaxy was originally developed for the low-resistivity burier layer of the bipolar transistor, it becomes popular in the MOS circuits now. Oxidation If a silicon wafer reacts with oxygen or water vapor, a silicon dioxide film is formed on the surface: ~ ~ Si02 Si0 2 + 2H 2 .

Epitaxy Epitaxy is a process that grows a thin single crystalline film on the surface of a silicon wafer. Thus, this film (2-20/Lm) has the same crystal orientation as the substrate [190]. Before epitaxy growth the wafer is mechanical or chemical cleaned. The epitaxial growth operations are typically based on the vapor phase epitaxy (VPE) or molecular beam epitaxy (MBE) [84, 412]. The film properties depend on the device requirement [190]. Although the epitaxy was originally developed for the low-resistivity burier layer of the bipolar transistor, it becomes popular in the MOS circuits now.

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