Design of System on a Chip: Devices & Components by Reis R., Jess J.A.G.

By Reis R., Jess J.A.G.

Layout of approach on a Chip is the 1st of 2 volumes addressing the layout demanding situations linked to new generations of the semiconductor know-how. some of the chapters are the compilations of tutorials offered at workshops in Brazil within the contemporary years by means of famous authors from around the world. specifically the 1st e-book bargains with parts and circuits. gadget types need to fulfill the stipulations to be computationally within your budget as well as be exact and to scale over quite a few generations of know-how. additionally the booklet addresses problems with the parasitic habit of deep sub-micron parts, comparable to parameter diversifications and sub-threshold results. in addition numerous authors take care of goods like combined sign parts and thoughts. We finally end up with an exposition of the know-how difficulties to be solved if our neighborhood desires to hold the velocity of the "International expertise Roadmap for Semiconductors" (ITRS).

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The threshold voltage VTO corresponds to the intersection point V P = 0V . 54 Chapter 3 The pinch-off voltage VP represents the channel voltage at a given gate voltage VG , for which the inversion charge density Qinv of the mobile charge forming the channel becomes negligible with respect to the depletion charge density QB [1] • — 2 £ a¥ £ a¥ VP = VG < VTO < a u ³ VG < VTO + ² s 0 + ´ < ² s 0 + ´µ. ³ ¤ 2¦ ¤ 2 ¦µ˜ – (6) The pinch-off voltage accounts for threshold voltage and substrate effects through the use of the parameters VTO and a , respectively.

HP EESof IC-CAP User’s Meeting. Schaefer, B. and Dunn, M. (1996) Pulsed measurements and modeling for electro-thermal effect. Proc. IEEE BCTM, 110-7. Stubing, H. -M. (1987) A compact physical large-signal model for highspeed bipolar transistors at high current densities-Part I: one-dimensional model. IEEE Trans. ED, 34, 1741-51. Turgeon, L. J. and Mathews, J. R. (1980) A bipolar transistor model of quasisaturation for use in computer-aided design (CAD). Proc. IEEE IEDM, 394-7. Vogelsong, R. S. and Brzezinski, C.

4 Vertical field dependent mobility While oxide thickness is reduced when scaling CMOS technology, the power supply voltage is usually not reduced quite accordingly--as would be required by the constant field scaling--to maintain maximum speed for digital circuit applications. Thus higher fields result across the gate oxides in more advanced technologies [14]. 3. A MOS Transistor Model for MixedAnalog-Digital Circuit Design 61 Table 1: Drain current in strong inversion. Mode Conduction Forward saturation Reverse saturation Blocked Expression for drain current Condition • V + VD — n u ` u ³VP < S µ u (VD < VS ) – 2 ˜ • — n  ` u ³VG < VTO < u (VS + VD )µ u (VD < VS ) – ˜ 2 nu` ` u (VP < VS ) 2  u (VG < VTO < n u VS ) 2 2 2u n nu` <` < u (VP < VD ) 2  u (VG < VTO < n u VD ) 2 2 2u n IF = IR ‰ ID = 0 VS ) VP VD ) VP VS ) VP VD > VP VS > VP VD ) VP VD = VS At high vertical fields, surface roughness scattering is considered as the main mechanism limiting mobility, while other scattering mechanisms dominate at lower fields.

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